RFP2N12L Overview
RFP2N12L Data Sheet April 1999 File Number 2874.2 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide...
RFP2N12L Key Features
- 2A, 120V
- rDS(ON) = 1.750Ω
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from QMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
RFP2N12L Applications
- 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528