Datasheet4U Logo Datasheet4U.com

RFP2N12L Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFP2N12L Data Sheet April 1999 File Number 2874.2 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528.

Key Features

  • 2A, 120V.
  • rDS(ON) = 1.750Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Ordering Information PART NUMBER RFP2N12L.

More Datasheets from Intersil (now Renesas)

Part Number Description
RFP2N12 N-Channel Power MOSFET
RFP2N10 N-Channel Power MOSFET
RFP2N10L N-Channel Power MOSFET
RFP2N15 N-Channel Power MOSFET
RFP2N08 N-Channel Power MOSFET
RFP2N08L N-Channel Power MOSFET
RFP2N20 N-Channel Power MOSFET
RFP2N20L N-Channel Power MOSFET
RFP22N10 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP25N05 N-Channel Power MOSFET

RFP2N12L Distributor