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RFP2N12 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 2A, 120V and 150V.
  • rDS(ON) = 1.750Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFP2N12 RFP2N15.

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Full PDF Text Transcription (Reference)

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Semiconductor RFP2N12, RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. BRAND RFP2N12 RFP2N15 September 1998 Features • 2A, 120V and 150V • rDS(ON) = 1.750Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.