RFP2N10L Description
This performance is acplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924.
RFP2N10L Key Features
- 2A, 80V and 100V
- rDS(ON) = 1.050Ω
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from QMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device