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RFP2N08L Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924.

Key Features

  • 2A, 80V and 100V.
  • rDS(ON) = 1.050Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Ordering Information PART NUMBER RFP2N08L RFP2N10L.

More Datasheets from Intersil (now Renesas)

Part Number Description
RFP2N08 N-Channel Power MOSFET
RFP2N10 N-Channel Power MOSFET
RFP2N10L N-Channel Power MOSFET
RFP2N12 N-Channel Power MOSFET
RFP2N12L N-Channel Power MOSFET
RFP2N15 N-Channel Power MOSFET
RFP2N20 N-Channel Power MOSFET
RFP2N20L N-Channel Power MOSFET
RFP22N10 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP25N05 N-Channel Power MOSFET

RFP2N08L Distributor