Datasheet Summary
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Features
- 3A, 450V and 500V
- rDS(ON) = 3Ω
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
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