RFM10N50 Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435.
RFM10N50 Key Features
- 10A, 450V and 500V
- rDS(ON) = 0.600Ω