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RFM10N45 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 10A, 450V and 500V.
  • rDS(ON) = 0.600Ω [ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFM10N45 RFM10N50.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. September 1998 Features • 10A, 450V and 500V • rDS(ON) = 0.600Ω [ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.