Datasheet Summary
Data Sheet July 1999 File Number
2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289.
Features
- 2A, 200V
- rDS(ON) = 3.500Ω
Symbol
Ordering Information
PART NUMBER RFP2N20 PACKAGE TO-220AB BRAND RFP2N20
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-220AB
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