RFP4N35 Datasheet | Intersil

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs Features - 4A, 350V and 400V - rDS(ON) = 2.000Ω - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35, as switching regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho transistors requiring high speed and low gate-drive power. These types can be operated directly from...