INJ0011AC1-T150 Datasheet | Isahaya Electronics Corporation

DESCRIPTION INJ0011AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance. OUTLINE DRAWING High Speed Switching Silicon P-channel MOSFET AEC-Q101 PLIANCE UNIT：ｍｍ 2.8 1.9 0.95 0.95 FEATURE - Input impedance is high, and not necessary to consider a drive electric current. - Drive voltage -4V - Low on Resistance. RDS(ON)=7.0Ω(TYP) @ID=-100m A, VGS=-4.0V RDS(ON)=4.8Ω(TYP) @ID=-100m A, VGS=-10V - High speed switching. - Small package for easy mounting. APPLICATION High speed switching , Analog switching 1.1 0.8 0～0.1 ① ② ③ JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTOR ①：Gate ②：SOURCE ③：DRAIN MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL VDSS VGSS ID IDP PD PARAMETER Drain-source voltage Gate-source voltage Drain current(DC) Drain current(Pulse) ※1 Total power dissipation RATING -50 ±20 -100 -400 200 UNIT V V m A m A m W Tch Channel temperature +150 ℃ Tstg Range of Storage temperature -55～+150 ℃ ※1：Pw≦10μs, Duty cycle≦1% EQUIVALENT CIRCUIT...