INJ0210AC1 Datasheet | Isahaya Electronics Corporation

DESCRIPTION INJ0210AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance. OUTLINE DRAWING 2.8 0.65 1.5 0.65 2.8 1.9 0.95 0.95 FEATURE - Input impedance is high, and not necessary to consider a drive electric current. - High drain current ID=-1.9A - Drive voltage -4.0V - Low on Resistance. RDS(ON)=228mΩtyp(@VGS=-4.5V) RDS(ON)=188mΩtyp(@VGS=-10V) - High speed switching. ① ② ③ Unit：mm 1.1 0.8 0～0.1 APPLICATION High speed switching, Analog switching MAXIMUM RATINGS（Ta=25℃） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) (※1) Drain Current(Pulse) (※2) Total Power Dissipation (※1) Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg ※1 package mounted on glass-epoxy substrate. (39mm×39mm×1.6mm,Cu pad 1500mm2) ※2 Pw≦1ms , Duty cycle≦1% Rating Unit -60 ±20 -1.9 -6 +150 ℃ -55～+150...