INJ0512AC1
INJ0512AC1 is Silicon P-channel MOSFET manufactured by Isahaya Electronics Corporation.
DESCRIPTION
INJ0512AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING 2.8
0.65 1.5 0.65
2.8 1.9 0.95 0.95
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- High drain current ID=-4.6A
- Drive voltage -4V
- Low on Resistance. RDS(ON)=36mΩtyp(@VGS=-10V)
RDS(ON)=47mΩtyp(@VGS=-4.5V)
- High speed switching.
①
②
③
Unit：mm
1.1 0.8 0～0.1
APPLICATION High speed switching, Analog switching
MAXIMUM RATINGS（Ta=25℃）
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) (※1) Drain Current(Pulse) (※2) Total Power Dissipation (※1) Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP PD Tch Tstg
※1 package mounted on glass-epoxy substrate.
(39mm×39mm×1.6mm,Cu pad 1500mm2)
※2 Pw≦1ms , Duty cycle≦1%
Rating
Unit
-30
±20
-4.6
-25
+150
℃
-55～+150...
