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INJ0512AC1 - Silicon P-channel MOSFET

General Description

INJ0512AC1 is a Silicon P-channel MOSFET.

This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.

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INJ0512AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION INJ0512AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance. OUTLINE DRAWING 2.8 0.65 1.5 0.65 2.8 1.9 0.95 0.95 FEATURE Input impedance is high, and not necessary to consider a drive electric current. High drain current ID=-4.6A Drive voltage -4V Low on Resistance. RDS(ON)=36mΩtyp(@VGS=-10V) RDS(ON)=47mΩtyp(@VGS=-4.5V) High speed switching. ① ② ③ 0.13 0.4 Unit:mm 1.1 0.8 0~0.