CJD30N10
CJD30N10 is N-Channel Power MOSFET manufactured by JCET.
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time.
TO-256
1. GATE 2. DRAIN
1 23
3. SOURCE
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURES
- High density cell design for ultra low RDS(on)
- Special process technology for high ESD capability
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Good stability and uniformity with high EAS
APPLICATIONS
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Power switching application
MARKING
EQUIVALENT...
