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CJD30N10 Datasheet N-channel Power MOSFET

Manufacturer: JCET

Overview: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-256 Plastic-Encapsulate MOSFETS CJ'30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   31mΩ@10V.

Datasheet Details

Part number CJD30N10
Manufacturer JCET
File Size 526.22 KB
Description N-Channel Power MOSFET
Datasheet CJD30N10-JCET.pdf

General Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

TO-256 1.

Key Features

  • High density cell design for ultra low RDS(on).
  • Special process technology for high ESD capability.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • Good stability and uniformity with high EAS.

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CJD30N10 Distributor