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CJD30N10 - N-Channel Power MOSFET

General Description

energy in the avalanche mode and switch efficiently.

energy device also offers a drain-to-source diode fast recovery time.

1.

Key Features

  • High density cell design for ultra low RDS(on).
  • Special process technology for high ESD capability.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJD30N10
Manufacturer JCET
File Size 526.22 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJD30N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-256 Plastic-Encapsulate MOSFETS CJ'30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   31mΩ@10V ID 30 A DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. TO-256 1. GATE 2. DRAIN 1 23 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.