CJD30N10 Description
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
CJD30N10 Key Features
- High density cell design for ultra low RDS(on)
- Special process technology for high ESD capability
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Good stability and uniformity with high EAS
CJD30N10 Applications
- High density cell design for ultra low RDS(on)
- Special process technology for high ESD capability