CJPF07N65 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX 1.3Ω@10V 7.4A TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE - High Current Rating - Lower RDS(on) - Lower Capacitance - Lower Total Gate Charge - Tighter VSD Specifications - Avalanche Energy Specified - Fast Switching Capability MARKING EQUIVALENT CIRCUIT CJPF07N65= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds Symbol VDS VGS ID IDM EAS RθJA TJ, TSTG Value 650 ±30 7.4 29.6 245 62.5 -55 ~+150 Unit V V A A m J ℃/W...