Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
1.0Ω@10V
10A
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-220F
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Low Gate Charge z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z...