CJPF12N65 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX 0.85Ω@10V 12A TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3. SOURCE MARKING CJPF12N65= Device code Soli d dot = Green molding pound device, if none, the normal device XXX=Date Code Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Single Pulsed Avalanche Energy (note2) Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGSS ID IDM EAS RθJA TJ, TSTG .cj-elec. Value 650 ±30 12 48 540 62.5 -55 ~+150 Unit V A m J ℃/W ℃ D,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Off characteristics...