CJQ9926 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ9926 Dual N-Channel MOSFET V(BR)DSS 20V RDS(on)MAX 40mΩ@2.5V 30mΩ@ 4.5V 4.8A SOP8 FEATURE z Advanced trench process technology z High density cell design for ultra low on-resistance z High power and current handing capability z Ideal for Liion battery pack applications MARKING Q9926= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding pound device, if none,the normal device. Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current - Pulsed Drain Current Power Dissipation - Thermal Resistance from Junction to Ambient - Junction Temperature Storage Temperature - Surface Mounted on 1” x 1” FR4 Board. Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 20 ±12 4.8 30 1.25 100 150 -55~+150 Unit V V A A W ℃/ W ℃ ℃ .cj-elec. D,Mar,2016 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter STATIC CHARACTERISTICS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage (note...