MMBT2907W - PNP Silicon Epitaxial Planar Medium Power Transistor

Datasheet Details

Part number	MMBT2907W
Manufacturer	JR Electronics
File Size	667.24 KB
Description	PNP Silicon Epitaxial Planar Medium Power Transistor
Datasheet	MMBT2907W Datasheet

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MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBT2907W MMBT2907AW Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC ShangHai JR Electronics.CO.,LTD. http://www.jrdz.net.cn MMBT2907W / MMBT2907AW Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 0.