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C1815LT1 - NPN TRANSISTOR

Key Features

  • Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150.

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Datasheet Details

Part number C1815LT1
Manufacturer Jiangsu Changjiang Electronics
File Size 157.79 KB
Description NPN TRANSISTOR
Datasheet download datasheet C1815LT1 Datasheet

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www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ otherwise specified£© Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) TRANSISTOR£¨NPN £© SOT¡ª 23 1. BASE 2. EMITTER 3.