Datasheet4U Logo Datasheet4U.com

2SB1386 - PNP Transistor

Key Features

  • z Low collector saturation voltage, z Execllent current-to-gain characteristics.

📥 Download Datasheet

Datasheet Details

Part number 2SB1386
Manufacturer Jin Yu Semiconductor
File Size 384.85 KB
Description PNP Transistor
Datasheet download datasheet 2SB1386 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.