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2SB1386 Datasheet PDF

JCET 2SB1386

PNP Transistor

Part No. 2SB1386
Datasheet 2SB1386 Download
Manufacturer
JCET
Description PNP Transistor
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2SB1386 datasheet page 1 preview

FEATURES

z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Continuous Collector Current -5 A ICP* Pulsed Collector Current -10 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 0.5 150 -55~150 W ℃ ℃ *Single pulse,PW=10ms

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test co
2SB1386 page 2 preview