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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1386 TRANSISTOR (PNP)
SOT-89-3L
FEATURES z Low collector saturation voltage
z Execllent current-to-gain characteristics
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
VCBO
Collector-Base Voltage
Value -30
Unit V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-6 V
IC Continuous Collector Current -5 A
ICP* Pulsed Collector Current
-10 A
PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature
0.
2SB1386 Datasheet
