KEC BAV23C
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV23C |
|---|---|
| Datasheet | BAV23C Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Low Leakage Current. Repetitive Peak Reverse Voltage : VRRM 250V. Low Capacitance : CT 2pF. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded. Forward Current Double diode loaded. VRM VR IFM IF 250 200 625 225 125 Surge Current (Square wave) t=1 s t = 100 s t = 10ms 9 IFSM 3 1.7 Power Dissipation PD 250* Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) UNIT V V mA mA A A A mW BAV23C SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 SOT-23 Marking Type Name U4 Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current To...