• Part: BAV23S
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 512.67 KB
Download BAV23S Datasheet PDF
BAV23S page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. Features Low Leakage Current. Repetitive Peak Reverse Voltage : VRRM 250V. Low Capacitance : CT 2pF. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded. Forward Current Double diode loaded. VRM VR IFM 250 200 625 225 125 Surge Current (Square wave) t=1 s t = 100 s t = 10ms IFSM Power Dissipation PD 250- Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : - Device mounted on a FR4 Printed-Circuit Board (PCB) UNIT V V mA mA A A A mW SILICON EPITAXIAL PLANAR DIODE E L BL DIM...