KEC BAV23S
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV23S |
|---|---|
| Datasheet | BAV23S Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Low Leakage Current. Repetitive Peak Reverse Voltage : VRRM 250V. Low Capacitance : CT 2pF. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded. Forward Current Double diode loaded. VRM VR IFM IF 250 200 625 225 125 Surge Current (Square wave) t=1 s t = 100 s t = 10ms 9 IFSM 3 1.7 Power Dissipation PD 250* Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) UNIT V V mA mA A A A mW BAV23S SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. CATHODE 1 2. ANODE 2 3. ANODE 1/ CATHODE 2 3 21 SOT-23 Marking J CType Name Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Rever...