• Part: KDS120
  • Description: SILICON EPITAXIAL TYPE DIODE
  • Manufacturer: KEC
  • Size: 71.18 KB
Download KDS120 Datasheet PDF
KDS120 page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features ᴌSmall Package : USM. ᴌLow Forward Voltage : VF=0.92V (Typ.). ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.). ᴌSmall Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM IO IFSM PD Tj Storage Temperature Range Tstg Note : - Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 - 100 - 2- 100 150 -55ᴕ150 UNIT V V mA mA A mW ᴱ ᴱ SILICON EPITAXIAL TYPE DIODE E MB 2...