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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌSmall Package
: USM.
ᴌLow Forward Voltage
: VF=0.92V (Typ.).
ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.).
ᴌSmall Total Capacitance : CT=2.2pF (Typ.).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING 85 80
300 * 100 *
2* 100 150 -55ᴕ150
UNIT V V mA mA A
mW ᴱ ᴱ
C L
A J G
KDS120
SILICON EPITAXIAL TYPE DIODE
E MB
M
2 13
NK
N
1. CATHODE 1 2. CATHODE 2 3. ANODE
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0.15
C 0.
KDS120 Datasheet
