KEC KDS121
SILICON EPITAXIAL PLANAR DIODE
| Part No. | KDS121 |
|---|---|
| Datasheet | KDS121 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
hSmall Package : USM. hLow Forward Voltage : VF=0.9V (Typ.). hFast Reverse Recovery Time : trr=1.6ns(Typ.). hSmall Total Capacitance : CT=0.9pF (Typ.). hSuffix U : Qualified to AEC-Q101. ex) KDS121-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55q150 UNIT V V mA mA A mW KDS121 SILICON EPITAXIAL PLANAR DIODE E M B M 2 D 1 3 J A G C L N 1. ANODE 1 2. ANODE 2 3. CATHODE H K N 3 2 1 DIM MILLIMETERS A 2.00+_ 0.20 B 1.25+_ 0.15 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L 0.70 M 0.42 +_0.10 N 0.10 Min. USM Marking Type Name B3 Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP.