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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (10ms)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING 85 80
300 * 100 * 2* 100 150 -55 150
UNIT V V mA mA A mW
C L
A J G
KDS121
SILICON EPITAXIAL PLANAR DIODE
E MB
M
2 13
NK
N
1. ANODE 1 2. ANODE 2 3. CATHODE
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0.15
C 0.
KDS121 Datasheet
