Datasheet4U Logo Datasheet4U.com

KDS121 - SILICON EPITAXIAL PLANAR DIODE

Datasheet Summary

Features

  • Small Package : USM. Low Forward Voltage : VF=0.9V (Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=0.9pF (Typ. ).

📥 Download Datasheet

Datasheet preview – KDS121

Datasheet Details

Part number KDS121
Manufacturer KEC
File Size 281.12 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS121 Datasheet
Additional preview pages of the KDS121 datasheet.

📁 Similar Datasheet

  • KDS181-RTR - Silicon Epitaxial Planar Diode (Kexin)
  • KDS - Intrusion Switches (ITT Industries)
  • KDS3512 - 80V N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS3601 - 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS3912 - 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS4470 - 40V N-Channel PowerTrench MOSFET (Kexin)
  • KDS4501H - Complementary PowerTrench Half-Bridge MOSFET (Kexin)
  • KDS4559 - 60V Complementary PowerTrench MOSFET (Kexin)
  • KDS4953 - Dual 30V P-Channel PowerTrench MOSFET (Kexin)
  • KDS5050 - KD-S5050 (JVC)
Other Datasheets by KEC
  • KDS121E - SILICON EPITAXIAL PLANAR DIODE
  • KDS121V - SILICON EPITAXIAL PLANAR DIODE
  • KDS120 - SILICON EPITAXIAL TYPE DIODE
  • KDS120E - SCHOTTKY BARRIER TYPE DIODE
  • KDS120V - SCHOTTKY BARRIER TYPE DIODE
  • KDS122 - SILICON EPITAXIAL PLANAR DIODE
  • KDS123E - SILICON EPITAXIAL PLANAR DIODE
  • KDS123S - SILICON EPITAXIAL PLANAR DIODE

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : USM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW C L A J G KDS121 SILICON EPITAXIAL PLANAR DIODE E MB M 2 13 NK N 1. ANODE 1 2. ANODE 2 3. CATHODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.
Published: |