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KDS120V - SCHOTTKY BARRIER TYPE DIODE

Key Features

  • Very Small Package : VSM. Low Forward Voltage : VF=0.92V (Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=2.2pF (Typ. ).

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Datasheet Details

Part number KDS120V
Manufacturer KEC
File Size 27.13 KB
Description SCHOTTKY BARRIER TYPE DIODE
Datasheet download datasheet KDS120V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Very Small Package : VSM. Low Forward Voltage : VF=0.92V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW A G H KDS120V SILICON EPITAXIAL TYPE DIODE K E B 2 13 PP 1. CATHODE 1 2. CATHODE 2 3. ANODE JD DIM A B C D E G H J K P MILLIMETERS 1.2 +_0.05 0.