KEC KDS121V
SILICON EPITAXIAL PLANAR DIODE
| Part No. | KDS121V |
|---|---|
| Datasheet | KDS121V Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
● Very Small Package : VSM.● Low Forward Voltage : VF=0.9V (Typ.).
● Fast Reverse Recovery Time : trr=1.6ns(Typ.).
● Small Total Capacitance : CT=0.9pF (Typ.).
● Suffix U : Qualified to AEC-Q101. ex) KDS121V-RTK/HU MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55 ~ 150 UNIT V V mA mA A mW ℃ ℃ A G H K D KDS121V SILICON EPITAXIAL PLANAR DIODE E B 2 1 C 1. ANODE 1 2. ANODE 2 3. CATHODE 3 Unit : mm DIM MILLIMETERS A 1.20±0.05 B 0.80±0.05 C 0.50±0.05 D 0.30±0.05 E 1.20±0.05 G 0.80±0.05 H 0.40±0.05 J 1.20±0.05 J K 0.20±0.05 3 2 1 VSM Marking B3
ELECTRICAL CHARACTERISTICS
(Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current IR Total Capacitance CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA 2026.