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KDS121V - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • Very Small Package : VSM. Low Forward Voltage : VF=0.9V (Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=0.9pF (Typ. ).

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Datasheet Details

Part number KDS121V
Manufacturer KEC
File Size 350.51 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS121V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Very Small Package : VSM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM IO IFSM PD Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW A G H KDS121V SILICON EPITAXIAL PLANAR DIODE K E B 2 13 PP 1. ANODE 1 2. ANODE 2 3. CATHODE JD DIM A B C D E G H J K P MILLIMETERS 1.2 +_0.05 0.8 +_0.05 0.5 +_ 0.