• Part: KDS121V
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 350.51 KB
Download KDS121V Datasheet PDF
KDS121V page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Very Small Package : VSM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM IO IFSM PD Tj Storage Temperature Range Tstg Note : - Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 - 100 - 2- 100 150 -55 150 UNIT V V mA mA A mW SILICON EPITAXIAL PLANAR DIODE 2 13 1....