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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT V V mA mA A mW
A G H
KDS123E
SILICON EPITAXIAL PLANAR DIODE
C
E B
D 2 DIM MILLIMETERS
13
A 1.60+_ 0.20 B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+_ 0.10
E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10
JH
0.50
J 0.13+_ 0.05
FF
1. CATHODE 2 2.
KDS123E Datasheet
