• Part: KDS123E
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 345.67 KB
Download KDS123E Datasheet PDF
KDS123E page 2
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KDS123E page 3
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Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300- 100- Surge Current (10mS) IFSM 2- Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 - Unit Rating. Total Rating=Unit Rating 0.7 UNIT V V mA mA A mW SILICON EPITAXIAL PLANAR DIODE D 2 DIM MILLIMETERS A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10 D...