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SEMICONDUCTOR
TECHNICAL DATA
KDS123U
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT V V mA mA A mW
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.
KDS123U Datasheet
