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KDS125U - SILICON EPITAXIAL PLANAR DIODE

Features

  • Small package : US6. Low forward voltage. Fast reverse recovery time. Small total capacitance.

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Datasheet Details

Part number KDS125U
Manufacturer KEC
File Size 362.37 KB
Description SILICON EPITAXIAL PLANAR DIODE
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small package : US6. Low forward voltage. Fast reverse recovery time. Small total capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM* IO* IFSM* PD Tj 85 V 80 V 300 mA 100 mA 2A 200 mW 150 Storage Temperature Range Tstg -55 150 * This is Maximum Ratings of single diode (D1 or D2 or D3 or D4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single diode one.
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