• Part: KDS125U
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 362.37 KB
Download KDS125U Datasheet PDF
KDS125U page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Small package : US6. Low forward voltage. Fast reverse recovery time. Small total capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM VR IFM- IO- IFSM- PD Tj 85 V 80 V 300 mA 100 mA 2A 200 mW 150 Storage Temperature Range Tstg -55 150 - This is Maximum Ratings of single diode (D1 or D2 or D3 or D4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single...