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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
VRM
80 V
Reverse Voltage
VR 80 V
Maximum (Peak) Forward Current
IFM
300 *
mA
Average Forward Current
IO
100 *
mA
Surge Current (10ms)
IFSM
2* A
Power Dissipation
PD
200**
mW
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Where D1, D2, D3, D4 are used independently or simultaneously, the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
A A1 CC
KDS127U
SILICON EPITAXIAL PLANAR DIODE
H
B B1
1 6 DIM MILLIMETERS A 2.00+_ 0.20
2 5 A1 1.3+_ 0.
KDS127U Datasheet
