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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 85 80 300 100 2 150 150
-55 150
UNIT V V mA mA A mW
KDS196
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.
KDS196 Datasheet
