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KDS196 - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=0.9pF(Typ. ).

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Datasheet Details

Part number KDS196
Manufacturer KEC
File Size 519.69 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS196 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 150 -55 150 UNIT V V mA mA A mW KDS196 SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.