Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
Features
VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID...