KF4N60I Datasheet PDF - KEC N-Channel MOSFET Specs

KF4N60I - N-Channel MOSFET

This page provides the datasheet information for the KF4N60I, a member of the KF4N60D N-Channel MOSFET family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V.

Datasheet Details

Part number	KF4N60I
Manufacturer	KEC
File Size	384.43 KB
Description	N-Channel MOSFET
Datasheet	KF4N60I Datasheet
Additional preview pages of the KF4N60I datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 3.2 2.

Published: Mar 23, 2016 |