GENERAL DESCRIPTION
FEATURES
VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF4N65P KF4N65F Drain-Source Voltage VDSS 650 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 3.6 3.6* 2.3 2.3* 8.4 8.4* 103 3.1 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 83.3 0.67 37.9 0.30 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.5 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 3.3 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D Q KF4N65P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_...
KEC
