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KMB4D0N30SA - Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Key Features

  • A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max. ) @ VGS=10V RDS(ON)=65m (Max. ) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P.

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Datasheet Details

Part number KMB4D0N30SA
Manufacturer KEC
File Size 499.63 KB
Description Trench MOSFET
Datasheet download datasheet KMB4D0N30SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB4D0N30SA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max.) @ VGS=10V RDS(ON)=65m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 30 20 4.