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KMB4D0N30SA - Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Features

  • A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max. ) @ VGS=10V RDS(ON)=65m (Max. ) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P.

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Datasheet preview – KMB4D0N30SA

Datasheet Details

Part number KMB4D0N30SA
Manufacturer KEC
File Size 499.63 KB
Description Trench MOSFET
Datasheet download datasheet KMB4D0N30SA Datasheet
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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB4D0N30SA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=30V, ID=4A Drain-Source ON Resistance RDS(ON)=47m (Max.) @ VGS=10V RDS(ON)=65m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 30 20 4.
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