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KMB6D0DN30QA - Trench MOSFET

General Description

This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Key Features

  • VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max. ) @VGS=10V (Max. ) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T.

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Datasheet Details

Part number KMB6D0DN30QA
Manufacturer KEC
File Size 492.99 KB
Description Trench MOSFET
Datasheet download datasheet KMB6D0DN30QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB6D0DN30QA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.