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SEMICONDUCTOR
TECHNICAL DATA
KTB1423
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.) Complementary to KTD1413.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pules
Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature
VCBO VCEO VEB0
IC ICP IB
PC
Tj
Storage Temperature Range
Tstg
RATING -120 -120 -5 -5 -8 -0.12
30
150 -55 150
UNIT V V V
A
A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.
KTB1423 Datasheet
