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SEMICONDUCTOR
TECHNICAL DATA
KTB1424
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING -80 -60 -10 -3 -0.5 25 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.
KTB1424 Datasheet
