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KTB1469 - EPITAXIAL PLANAR PNP TRANSISTOR

Datasheet Summary

Features

  • ᴌHigh Breakdown Voltage : VCEO=-180V(Min. ) ᴌHigh Transition Frequency : fT=50MHz(Typ. ) ᴌHigh Current : IC(max)=-2A ᴌComplementary to KTD2161.

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Datasheet Details

Part number KTB1469
Manufacturer KEC
File Size 69.02 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION FEATURES ᴌHigh Breakdown Voltage : VCEO=-180V(Min.) ᴌHigh Transition Frequency : fT=50MHz(Typ.) ᴌHigh Current : IC(max)=-2A ᴌComplementary to KTD2161 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -200 -180 -5 -2 -0.2 25 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTB1469 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3.
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