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SEMICONDUCTOR
TECHNICAL DATA
KTC2030D
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=1.0V(Max) at IC=2A, IB=0.2A
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
VCBO VCEO VCER VEBO
IC IB
PC
Tj Tstg
RATING 80 60 100 10 3 0.5 1 20 150
-55 150
UNIT V
V
V A A
W
A C
M G
FF 123
E
BD
H K
J
DIM MILLIMETERS
A 6.6 +_0.2 B 6.1+_ 0.2
C 5.0 +_ 0.2
D 1.1+_ 0.2 E 2.7 +_ 0.2 F 2.3+_ 0.1
G 1.0 MAX
N
H J
2.3+_ 0.2 0.5+_ 0.1
K 1.0+_ 0.1
L LM
0.5+_ 0.1 0.95 MAX
N 0.9+_ 0.1
1. BASE 2. COLLECTOR 3.
KTC2030D Datasheet
