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SEMICONDUCTOR
TECHNICAL DATA
KTC2036
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=1.0V(Max) at IC=2A, IB=0.2A
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
VCBO VCEO VCER VEBO
IC IB
PC
Tj Tstg
RATING 80 60 100 10 3 0.5 2 20 150
-55 150
UNIT V
V
V A A
W
K
A S
E
LL M
DD
NN
G B
J
F P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.
KTC2036 Datasheet
