The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.
FEATURES ᴌHigh Gain : Gpe=33dB(Typ.) (f=45MHz). ᴌGood Linearity of hFE.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg
RATING 30 25 4 50 -50 625 150
-55ᴕ150
UNIT V V V mA mA mW ᴱ ᴱ
L M
C
KTC3197
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3.
KTC3197 Datasheet
