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KTC814U - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • High Emitter-Base Voltage : VEBO=25V(Min. ) High Reverse hFE A1 KTC814U.

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Datasheet Details

Part number KTC814U
Manufacturer KEC
File Size 65.07 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC814U Datasheet

Full PDF Text Transcription for KTC814U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC814U. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE A1 KTC814U EPITAXIAL PLANAR NPN TR...

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e : VEBO=25V(Min.) High Reverse hFE A1 KTC814U EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com B B1 1 6 5 4 D : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA) A 2 3 DIM A A1 B B1 C D G H MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating ) H C C SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 50

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