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SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION. FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE
A1
KTC814U
EPITAXIAL PLANAR NPN TRANSISTOR
www.DataSheet4U.com
B B1 1 6 5 4 D
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA)
A
2 3
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
)
H
C
C
SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg
RATING 50 20 25 300 60 200 150 -55 150
UNIT V V V mA mA mW
1.
KTC814U Datasheet
