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SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES ᴌHigh foward current transfer ratio hFE. ᴌLow collector to emitter saturation voltage VCE(sat). ᴌHigh emitter to base voltage VEBO. ᴌLow noise voltage NV. ᴌESM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature Range
Tstg
RATING 50 40 15 50 100 100 150
-55ᴕ150
UNIT V V V
mA
mW ᴱ ᴱ
A G H
KTD1824E
EPITAXIAL PLANAR NPN TRANSISTOR
C
E B
2 13
DIM MILLIMETERS
D
A 1.60+_ 0.10 B 0.85+_ 0.10
C 0.
KTD1824E Datasheet
