KEC KTD1863
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KTD1863 |
|---|---|
| Datasheet | KTD1863 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
High Breakdown Voltage and High Current : VCEO=80V, IC=1A. Low VCE(sat) Complementary to KTB1241. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 100 80 5 1 -1 1 150 -55 150 UNIT V V V A A W O D KTD1863 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 HK L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92LELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter-Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO IEBO V(BR)CEO...