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KTD2854 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High DC Current Gain : hFE=2000(Min. ) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.5V(Max. ) (IC=1A, IB=1mA) Complementary to KTB2234.

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Datasheet Details

Part number KTD2854
Manufacturer KEC
File Size 358.08 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD2854 Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KTD2854 EPITAXIAL PLANAR NPN TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) Complementary to KTB2234. MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Range Tstg RATING 100 100 8 2 3 0.5 1 150 -55 150 UNIT V V V A A W BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.
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