The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907/2907A. KTN2222/2222A Electrically Similar to 2N2222/2222A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222 KTN2222A
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
VCBO VCEO VEBO
IC
PC
Tj
60 75 30 40 56
600
625
150
V V V mA
mW
Storage Temperature Range Tstg -55 150
L M
C
KTN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.