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KTN2222S - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • Low Leakage Current : ICEX=10nA(Max. ) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max. ) ; IC=150mA, IB=15mA. Complementary to the KTN2907S/2907AS.

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Datasheet Details

Part number KTN2222S
Manufacturer KEC
File Size 718.29 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTN2222S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907S/2907AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2222S KTN2222AS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature VCBO VCEO VEBO IC PC Tj 60 75 30 40 56 600 350 150 V V V mA mW Storage Temperature Range Tstg -55 150 Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.