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KTN2222AS - EPITAXIAL PLANAR NPN TRANSISTOR

Download the KTN2222AS datasheet PDF. This datasheet also covers the KTN2222S variant, as both devices belong to the same epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Leakage Current : ICEX=10nA(Max. ) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max. ) ; IC=150mA, IB=15mA. Complementary to the KTN2907S/2907AS.

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Note: The manufacturer provides a single datasheet file (KTN2222S-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KTN2222AS
Manufacturer KEC
File Size 718.29 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTN2222AS Datasheet

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KTN2222S EPITAXIAL PLANAR NPN TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907S/2907AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2222S KTN2222AS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature VCBO VCEO VEBO IC PC Tj 60 75 30 40 56 600 350 150 V V V mA mW Storage Temperature Range Tstg -55 150 Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.